Бутоксид висмутия

Description

Bismuth(III) butoxide (bismuth n-butoxide) is an organometallic alkoxide compound of bismuth, a precursor for thin-film and sol-gel synthesis of bismuth-based oxide materials. CAS 90520-71-1.

Basic Attributes

• CAS No.: 90520-71-1
• Chemical formula: C12H27BiO3
• Molecular weight: 428.32136
• Exact weight: 428.17600
• PSA specifications: 69.18000
• XLogP3: 3.65100

Synonyms

Bismuth(III) n-butoxide; bismuth(III) n-butoxide.

Substance class and mechanism of action

Bismuth alkoxides are a class of organometallic compounds in which the bismuth atom is linked to organic alkoxy groups through oxygen bridges. Upon hydrolysis or thermal decomposition, such compounds are converted to bismuth oxide with a uniform distribution of the metal at the molecular level, making them convenient molecular precursors for sol-gel processes and thin film deposition methods such as atomic layer deposition (ALD).

Scope of application

The main application is as a precursor for the production of bismuth-based oxide films by atomic layer deposition and sol-gel technology, including films of iron-bismuth oxide and bismuth titanate for ferroelectric and multiferroic devices. More widely, organometallic alkoxide compounds of this type are used in the preparation of catalysts, special coatings and functional inorganic materials, where high chemical uniformity of metal distribution in the final product is required.

Storage

Store in an airtight container in a dry, inert atmosphere, avoiding contact with air moisture - bismuth alkoxides are sensitive to hydrolysis. It is recommended to work with the compound in a glove box or under a protective atmosphere of inert gas: contact with air moisture triggers the hydrolysis of alkoxide groups with the release of butanol and the gradual formation of bismuth hydroxide or oxide directly in the storage container, which makes the material unsuitable for subsequent precise dosing in film deposition processes. Compared to inorganic bismuth salts - nitrate or chloride - alkoxide precursors provide a lower transition temperature into the oxide phase and make it possible to obtain films under gentle annealing conditions, which is important when applying coatings to temperature-sensitive substrates in the production of electronic devices. The molecular weight of 428.32136 and the exact mass of 428.17600 are used as control parameters to confirm the authenticity of a reagent lot; a high XLogP3 value of 3.65100 indicates a pronounced lipophilicity of the compound, typical of alkoxides with long organic radicals. Synonymous names for the compound in supplier catalogs: bismuth (III) n-butoxide, bismuth (III) n-butoxide - these designations help to verify the position when ordering from different manufacturers of organometallic precursors. CAS registration number 90520-71-1 is used when reconciling the reagent lot in the purchasing documentation of the enterprise.